Low-temperature-grown InGaAs quantum wells for optical device applications

Low-temperature-grown InGaAs quantum wells for optical device applications

Bibliographic Details
Main Author:	Juodawlkis, Paul W.
Format:	Others
Language:	en_US
Published:	Georgia Institute of Technology 2007
Subjects:	Metal semiconductor field-effect transistors Gallium arsenide Optical data processing Signal processing
Online Access:	http://hdl.handle.net/1853/13752

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