| Summary: | The objectives of this research lie in the area of millimeter and submillimeter wave signal generation and are directed into two paths that are separate, but related. The first involves the development of a W-Band oscillator using Raytheon's Metamorphic High Electron Mobility Transistor (MHEMT) substrate. The second involves the development of silicon formed rectangular waveguide to replace metallic waveguide, ultimately to be used in THz signal source circuits.
An exploration of two different topologies for a W-Band oscillator design utilizing Raytheon s MHEMT substrate is presented. This material will demonstrate the reasoning behind the topology selection and the approach of the design. An evaluation of this first ever W-Band MHEMT oscillator will be presented demonstrating its performance capabilities. Finally, an oscillator design will be presented extending the first successful MHEMT W-Band design.
The area of Silicon rectangular waveguide with is covered. A design approach of the silicon waveguide will be discussed. The technology used to fabricate and package the silicon waveguide will be explained. The results of the very first 400 GHz silicon waveguide will be shown and the future efforts will be covered.
A silicon micromachined waveguide multiplier using an HBV diode circuit is constructed and successfully demonstrated with an output frequency of 261 GHz, showing little difference between using micromachined waveguide and metal waveguide.
Lastly, a power combining frequency multiplier is developed utilizing HBV diodes with an output of 260 GHz. The input and output sections are created using branch line couplers. The results showed good power generation as compared to a single diode multiplier.
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