Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs

Bibliographic Details
Main Author: Quesenberry, Paul Elwin
Published: Georgia Institute of Technology 2009
Subjects:
Online Access:http://hdl.handle.net/1853/30779
id ndltd-GATECH-oai-smartech.gatech.edu-1853-30779
record_format oai_dc
spelling ndltd-GATECH-oai-smartech.gatech.edu-1853-307792013-12-15T03:44:42ZScanning tunneling microscopy studies of a reactive interface, Ni/GaAsQuesenberry, Paul ElwinScanning tunneling microscopyGas dynamicsGeorgia Institute of Technology2009-10-22T11:45:33Z2009-10-22T11:45:33Z1996-05Dissertation436830http://hdl.handle.net/1853/30779
collection NDLTD
sources NDLTD
topic Scanning tunneling microscopy
Gas dynamics
spellingShingle Scanning tunneling microscopy
Gas dynamics
Quesenberry, Paul Elwin
Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs
author Quesenberry, Paul Elwin
author_facet Quesenberry, Paul Elwin
author_sort Quesenberry, Paul Elwin
title Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs
title_short Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs
title_full Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs
title_fullStr Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs
title_full_unstemmed Scanning tunneling microscopy studies of a reactive interface, Ni/GaAs
title_sort scanning tunneling microscopy studies of a reactive interface, ni/gaas
publisher Georgia Institute of Technology
publishDate 2009
url http://hdl.handle.net/1853/30779
work_keys_str_mv AT quesenberrypaulelwin scanningtunnelingmicroscopystudiesofareactiveinterfacenigaas
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