High Pressure Chemical Vapor Deposition: A Novel Approach for the Growth of InN
The development of next generation devices for high speed switching, high efficiency energy conversion, spintronic devices require the development of advanced material systems. While conventional group IV, group II-VI and group III-V based materials systems have served as a base material in many mod...
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| Format: | Others |
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Digital Archive @ GSU
2006
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| Online Access: | http://digitalarchive.gsu.edu/phy_astr_diss/6 http://digitalarchive.gsu.edu/cgi/viewcontent.cgi?article=1005&context=phy_astr_diss |