Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric
In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has been investigated in this thesis. Different approaches have been adopted to improve the device per...
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| Language: | English |
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The University of Hong Kong (Pokfulam, Hong Kong)
2014
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| Online Access: | http://hdl.handle.net/10722/206467 |