Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors
Ultrafast mid-infrared laser pulse generation using optical semiconductor switching is investigated experimentally for application to subpicosecond CO₂ laser pulse generation at 10.6 μm. Time-resolved infrared measurements, which are based on cross-correlation and reflection-reflection correlatio...
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ndltd-LACETR-oai-collectionscanada.gc.ca-BVAU.2429-72532014-03-14T15:41:52Z Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors Elezzabi, Abdulhakem Y. Ultrafast mid-infrared laser pulse generation using optical semiconductor switching is investigated experimentally for application to subpicosecond CO₂ laser pulse generation at 10.6 μm. Time-resolved infrared measurements, which are based on cross-correlation and reflection-reflection correlation techniques, are used to determine the duration of the reflected infrared pulses from a GaAs infrared reflection switch. These time-resolved measurements together with time-integrated measurements are used to derive a model describing the behaviour of the GaAs infrared reflection switch. it is found that diffusion and two-body recombination whose rate is taken to be density-dependent, can accurately describe the ultrafast infrared reflectivity switching process in GaAs. We have also in vestigated some novel semiconductor materials with ultrafast recombination lifetimes for ultrafast semiconductor switching application. A molecular beam epitaxy low tempera ture grown GaAs (LT-GaAs) and radiation damaged GaAs (RD-GaAs) are successfully used to switch out ultrashort CO₂ laser pulses. Application of the time-resolved crosscorrelation technique to nonequilibrium carrier lifetime measurements in highly excited LT-GaAs, RD-GaAs, and In₀.₈₅Ga₀.₁₅As/GaAs relaxed superlattice structure are found to be in good agreement with other reported techniques. As an application to semicon ductor probing, ultrafast infrared transmission experiments are conducted to determine the absorption of infrared pulses in Si of various dopings after free carriers have been generated by absorption of a subpicosecond laser pulse of above band gap photon en ergy. By fitting the experimental data to a theoretical model, the free-carrier absorption cross-sections and the momentum relaxation times are calculated. 2009-04-16T22:39:58Z 2009-04-16T22:39:58Z 1995 2009-04-16T22:39:58Z 1995-11 Electronic Thesis or Dissertation http://hdl.handle.net/2429/7253 eng UBC Retrospective Theses Digitization Project [http://www.library.ubc.ca/archives/retro_theses/] |
collection |
NDLTD |
language |
English |
sources |
NDLTD |
description |
Ultrafast mid-infrared laser pulse generation using optical semiconductor switching is
investigated experimentally for application to subpicosecond CO₂ laser pulse generation
at 10.6 μm. Time-resolved infrared measurements, which are based on cross-correlation
and reflection-reflection correlation techniques, are used to determine the duration of
the reflected infrared pulses from a GaAs infrared reflection switch. These time-resolved
measurements together with time-integrated measurements are used to derive a model
describing the behaviour of the GaAs infrared reflection switch. it is found that diffusion
and two-body recombination whose rate is taken to be density-dependent, can accurately
describe the ultrafast infrared reflectivity switching process in GaAs. We have also in
vestigated some novel semiconductor materials with ultrafast recombination lifetimes for
ultrafast semiconductor switching application. A molecular beam epitaxy low tempera
ture grown GaAs (LT-GaAs) and radiation damaged GaAs (RD-GaAs) are successfully
used to switch out ultrashort CO₂ laser pulses. Application of the time-resolved crosscorrelation
technique to nonequilibrium carrier lifetime measurements in highly excited
LT-GaAs, RD-GaAs, and In₀.₈₅Ga₀.₁₅As/GaAs relaxed superlattice structure are found
to be in good agreement with other reported techniques. As an application to semicon
ductor probing, ultrafast infrared transmission experiments are conducted to determine
the absorption of infrared pulses in Si of various dopings after free carriers have been
generated by absorption of a subpicosecond laser pulse of above band gap photon en
ergy. By fitting the experimental data to a theoretical model, the free-carrier absorption
cross-sections and the momentum relaxation times are calculated. |
author |
Elezzabi, Abdulhakem Y. |
spellingShingle |
Elezzabi, Abdulhakem Y. Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors |
author_facet |
Elezzabi, Abdulhakem Y. |
author_sort |
Elezzabi, Abdulhakem Y. |
title |
Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors |
title_short |
Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors |
title_full |
Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors |
title_fullStr |
Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors |
title_full_unstemmed |
Ultrafast switching of CO₂ laser pulses by optically-induced plasma reflection in semiconductors |
title_sort |
ultrafast switching of co₂ laser pulses by optically-induced plasma reflection in semiconductors |
publishDate |
2009 |
url |
http://hdl.handle.net/2429/7253 |
work_keys_str_mv |
AT elezzabiabdulhakemy ultrafastswitchingofco2laserpulsesbyopticallyinducedplasmareflectioninsemiconductors |
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1716651111237025792 |