EMI Reduction in Discrete SMPS Using Programmable Gate Driver Output Resistance

EMI Reduction in Discrete SMPS Using Programmable Gate Driver Output Resistance

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A gate driver IC with programmable driving strength to reduce electromagnetic interference (EMI) in SMPS is presented in this thesis. The design builds on previous segmented gate driver designs that have been used to improve light load efficiency. The presented solution is to dynamically adjust the...

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Bibliographic Details
Main Author: Shorten, Andrew William
Other Authors: Ng, Wai Tung
Language:en_ca
Published: 2011
Subjects:
SMPS
EMI
Power Electronics
Integrated Circuits
Gate Driver
Electronics and Electrical
Online Access:http://hdl.handle.net/1807/31441
Description
Summary:A gate driver IC with programmable driving strength to reduce electromagnetic interference (EMI) in SMPS is presented in this thesis. The design builds on previous segmented gate driver designs that have been used to improve light load efficiency. The presented solution is to dynamically adjust the output resistance Rout at the arrival of each gate pulse to minimize EMI while maintaining low switching loss. Dynamically adjusting Rout is not possible with conventional gate driver designs. Thus, a segmented gate driver is designed and fabricated in the AMS 0.35μm 40V HVCMOS process. Unlike traditional snubber circuits, the proposed method does not require extra discrete components that dissipate energy. Experimental results indicate up to a 7dBμV improvement in peak Conducted EMI (CEMI) between 20 MHz and 30 MHz and a 150μV/m improvement in peak Radiated EMI (REMI) between 88 MHz and 216 MHz.

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