The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. === Includes bibliographical references (p. 135-140). === by David Ross Greenberg. === Ph.D.

Bibliographic Details
Main Author: Greenberg, David Ross
Other Authors: Jesús A. del Alamo.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2007
Subjects:
Electrical Engineering and Computer Science
Online Access:http://hdl.handle.net/1721.1/37763
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spelling ndltd-MIT-oai-dspace.mit.edu-1721.1-377632019-05-02T15:35:21Z The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor Greenberg, David Ross Jesús A. del Alamo. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science Electrical Engineering and Computer Science Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. Includes bibliographical references (p. 135-140). by David Ross Greenberg. Ph.D. 2007-06-28T12:34:39Z 2007-06-28T12:34:39Z 1995 1995 Thesis http://hdl.handle.net/1721.1/37763 32875637 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 140 p. application/pdf Massachusetts Institute of Technology
collection NDLTD
language English
format Others
sources NDLTD
topic Electrical Engineering and Computer Science
spellingShingle Electrical Engineering and Computer Science
Greenberg, David Ross
The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
description Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. === Includes bibliographical references (p. 135-140). === by David Ross Greenberg. === Ph.D.
author2 Jesús A. del Alamo.
author_facet Jesús A. del Alamo.
Greenberg, David Ross
author Greenberg, David Ross
author_sort Greenberg, David Ross
title The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
title_short The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
title_full The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
title_fullStr The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
title_full_unstemmed The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
title_sort physics and technology of the inalas/n⁺-inp heterostructure field-effect transistor
publisher Massachusetts Institute of Technology
publishDate 2007
url http://hdl.handle.net/1721.1/37763
work_keys_str_mv AT greenbergdavidross thephysicsandtechnologyoftheinalasninpheterostructurefieldeffecttransistor
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