Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. === Includes bibliographical references (p. 163-173). === Conventional Si CMOS intrinsic device performance has improved by 17% per year over the last 30 years through scaling of the g...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2008
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| Online Access: | http://hdl.handle.net/1721.1/42236 |