Magnetoelectric hexaferrite thin films growth for next generation device applications

• Online Access: http://hdl.handle.net/2047/d20004889

The main step toward miniaturizing microwave and magnetic devices and integrating them with semiconducting elements, is to deposit thin film of hexaferrite materials. In this work, alternating target laser ablation deposition (ATLAD) is used for in-situ deposition of M-type and Y-type hexaferrites. There have been considerable reports on epitaxial growth of M-type hexaferrite but not on Y-types, since it is very difficult and challenging to produce them. One of the main problems is the need of substrate temperatures in excess of 1150°C which requires additional expensive high temperature equipment. Our developed process can be done at lower temperatures by PLD equipment and can form unique crystal structures which cannot be achieved by other techniques.