Radiation effects in III-V semiconductors and heterojunction bipolar transistors
The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication o...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/33262 |