Radiation effects in III-V semiconductors and heterojunction bipolar transistors
The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication o...
Main Author: | Shatalov, Alexei |
---|---|
Other Authors: | Sivaramakrishnan, Subramanian |
Language: | en_US |
Published: |
2012
|
Subjects: | |
Online Access: | http://hdl.handle.net/1957/33262 |
Similar Items
-
Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors
by: Pratapgarhwala, Mustansir M.
Published: (2006) -
Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors
by: Lee, Yi-Che
Published: (2015) -
Radiation effects in III-V compound semiconductor heterostructure devices
by: Li, ChyiShiun
Published: (2012) -
Radiation effects on III-V heterostructure devices
by: Jun, Bongim
Published: (2012) -
Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors
by: Sutton, Akil K.
Published: (2005)