Reliability and hot-electron effects in analog and mixed-mode circuits
Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several ap...
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| Language: | en_US |
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2013
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| Online Access: | http://hdl.handle.net/1957/36252 |