Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization

Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization

Bibliographic Details
Main Author: Yu, Lu
Language:English
Published: Case Western Reserve University School of Graduate Studies / OhioLINK 2014
Subjects:
Chemical Engineering
Electroless
Cu-Mn
Underpotential Deposition
Nucleation
Thin Film
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217
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spelling ndltd-OhioLink-oai-etd.ohiolink.edu-case13965212172021-08-03T06:23:05Z Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization Yu, Lu Chemical Engineering Electroless Cu-Mn Underpotential Deposition Nucleation Thin Film Copper interconnects in microchips are currently formed by Cuelectrodeposition. With the trend of future device miniaturization, the copper interconnect dimensions will shrink, requiring a drastic change in the current state-of-the-art interconnect metallization process. The major technology hurdles include: i) non-uniformity of Cu seed layer deposited by physical vapor deposition (PVD) on the barrier and ii) deteriorated electromigration resistance of Cu interconnects. A technology under development relies on vapor deposition of a uniform ruthenium (Ru) layer on the barrier, followed by electroless deposition of a thin and continuous Cu seed layer on Ru.In this thesis, we report an electroless bath that enables deposition of copper-manganese (Cu-Mn) alloy film. Incorporating Mn with Cu is attractive due to ability of Mn to improve Cu's electromigration resistance. Results show the Mn incorporated is mobile, a requisite for its application in interconnect metallization. Electrochemical and Quartz Crystal Microbalance (QCM) measurements indicate that the mechanism of Mn incorporation during electroless Cu deposition is most likely the underpotential deposition of Mn on Cu.In addition, a novel electroless Cu bath that enables high Cu nucleation density on the Ru surface is developed. The bath enables deposition of sub-10 nm thin Cu film on Ru. A special additive, ethylenediamine is identified that can significantly improve electroless Cu nucleation on Ru. The mechanism by which ethylenediamine improves nucleation is linked to the inhibition of autocatalytic plating on already formed nuclei, thereby providing driving force for generation of new nuclei which yield high nucleation density thin Cu films. 2014-06-12 English text Case Western Reserve University School of Graduate Studies / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217 http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217 unrestricted This thesis or dissertation is protected by copyright: some rights reserved. It is licensed for use under a Creative Commons license. Specific terms and permissions are available from this document's record in the OhioLINK ETD Center.
collection NDLTD
language English
sources NDLTD
topic Chemical Engineering
Electroless
Cu-Mn
Underpotential Deposition
Nucleation
Thin Film
spellingShingle Chemical Engineering
Electroless
Cu-Mn
Underpotential Deposition
Nucleation
Thin Film
Yu, Lu
Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization
author Yu, Lu
author_facet Yu, Lu
author_sort Yu, Lu
title Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization
title_short Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization
title_full Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization
title_fullStr Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization
title_full_unstemmed Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization
title_sort electroless deposition of copper and copper-manganese alloy for application in interconnect metallization
publisher Case Western Reserve University School of Graduate Studies / OhioLINK
publishDate 2014
url http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217
work_keys_str_mv AT yulu electrolessdepositionofcopperandcoppermanganesealloyforapplicationininterconnectmetallization
_version_ 1719435792869228544

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