Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters

Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters

Bibliographic Details
Main Author: HU, CHENXI
Language:English
Published: The Ohio State University / OhioLINK 2020
Subjects:
Electrical Engineering
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=osu1589300145090549
id ndltd-OhioLink-oai-etd.ohiolink.edu-osu1589300145090549
record_format oai_dc
spelling ndltd-OhioLink-oai-etd.ohiolink.edu-osu15893001450905492021-08-03T07:15:00Z Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters HU, CHENXI Electrical Engineering Ultraviolet (UV) light emitting diodes (LEDs) have been attracting research interest as an environment-friendly, compact, spectra-tunable, controllable and energy efficient alternative to conventional UV sources for application in a wide range of fields including biochemical sensing, covert-communication, epoxy curing, water treatment and purification. Different quantum well (QW) structures based on AlGaN, which covers the bandgap range from 196 nm to 365 nm, have been investigated for UV-LED applications. Recently, high-Al content AlInN alloy based QWs are also being considered for UV-LED application. However, the external quantum efficiency of UV-LEDs has generally been low due to the large polarization in wurtzite nitride materials as well as poor light extraction efficiency. Zn-IV-N2 compounds, namely, ZnSiN2, ZnGeN2 and ZnSnN2 are closely related to the group-III nitrides. ZnGeN2 and ZnSnN2 have been predicted to have the large valence band offset with GaN and AlN, which can be exploited to design band engineered AlInGaN/ZnSiGeN2 heterostructure QW for applications in optoelectronics. In this thesis, we investigate AlN/AlInGaN/ZnSiGeN2/AlInGaN/AlN heterostructure QWs for applications in UV-LEDs with peak emission wavelength (λpeak) close to 270 nm. In this structure, the ZnSiGeN2 works as the hole confinement layer due to the large valence band offset with AlInGaN. Consequently, the electron-hole wavefunction overlap (Гe-h) in the proposed design enhances remarkably as compared to the Гe-h in conventional AlN/AlGaN/AlN QWs. A 6-band k.p method was used to calculate the band alignments as well as the spontaneous emission spectra and the optical gain spectra of the investigated QW structures. For λpeak ~ 255 – 288 nm, the investigated AlInGaN/ZnSiGeN2 QW structure provided ~4.5X enhancement in Гe-h as compared to the conventional AlGaN QWs. The peak spontaneous emission intensity and spontaneous emission radiative recombination rate increased to almost 10X in the proposed QW structures as compared to the conventional structure. Similar improvement was also found in the peak TE-polarized optical gain. Therefore, the novel AlInGaN/ZnSiGeN2 based heterostructure QW can potentially be used to obtain the high-efficiency UV lasers. 2020 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1589300145090549 http://rave.ohiolink.edu/etdc/view?acc_num=osu1589300145090549 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic Electrical Engineering
spellingShingle Electrical Engineering
HU, CHENXI
Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters
author HU, CHENXI
author_facet HU, CHENXI
author_sort HU, CHENXI
title Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters
title_short Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters
title_full Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters
title_fullStr Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters
title_full_unstemmed Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters
title_sort simulation studies and design of alingan-znsigen2 quantum wells for high-efficiency ultraviolet light emitters
publisher The Ohio State University / OhioLINK
publishDate 2020
url http://rave.ohiolink.edu/etdc/view?acc_num=osu1589300145090549
work_keys_str_mv AT huchenxi simulationstudiesanddesignofalinganznsigen2quantumwellsforhighefficiencyultravioletlightemitters
_version_ 1719457525070299136

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