Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS

Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS

Bibliographic Details
Main Author: RAJASEKARAN, RAJASUNDARAM
Language:English
Published: University of Cincinnati / OhioLINK 2006
Subjects:
InAlGaAS
Quantum Well
InGaAsP
Multi Quantum well lasers
Well number
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin1155791964
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spelling ndltd-OhioLink-oai-etd.ohiolink.edu-ucin11557919642021-08-03T06:11:26Z Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS RAJASEKARAN, RAJASUNDARAM InAlGaAS Quantum Well InGaAsP Multi Quantum well lasers Well number This thesis is undertaken to understand the trade-off in the performance of semiconductor lasers with increase in well number. Five and seven quantum well InAlGaAs lasers operating at 1300nm were investigated. Seven quantum well lasers showed better optical confinement and characteristic temperature than the five quantum well lasers. Increase in well number lowers threshold current and improves optical confinement factor, characteristic temperature, net gain and material gain with trade off in slope efficiency, differential quantum efficiency and cavity loss. Design curves were plotted to aid laser designers to understand the performance trade off in increasing the well number. Seven quantum well lasers exhibited low threshold current of 13.8mA and high characteristic temperature of 71°c. Five quantum well lasers showed high slope efficiency of 0.198W/A and a low cavity loss of 18/cm. This study also helps in optimizing the number of quantum wells for the given cavity length. . 2006-10-02 English text University of Cincinnati / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=ucin1155791964 http://rave.ohiolink.edu/etdc/view?acc_num=ucin1155791964 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic InAlGaAS
Quantum Well
InGaAsP
Multi Quantum well lasers
Well number
spellingShingle InAlGaAS
Quantum Well
InGaAsP
Multi Quantum well lasers
Well number
RAJASEKARAN, RAJASUNDARAM
Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS
author RAJASEKARAN, RAJASUNDARAM
author_facet RAJASEKARAN, RAJASUNDARAM
author_sort RAJASEKARAN, RAJASUNDARAM
title Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS
title_short Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS
title_full Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS
title_fullStr Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS
title_full_unstemmed Dependence of LASER Performance on Number of Quantum Wells InAIGaAs Semiconductor LASERS
title_sort dependence of laser performance on number of quantum wells inaigaas semiconductor lasers
publisher University of Cincinnati / OhioLINK
publishDate 2006
url http://rave.ohiolink.edu/etdc/view?acc_num=ucin1155791964
work_keys_str_mv AT rajasekaranrajasundaram dependenceoflaserperformanceonnumberofquantumwellsinaigaassemiconductorlasers
_version_ 1719432445065953280

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