SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW

Bibliographic Details
Main Author: ARNOLD, MARTIN KEITH, JR.
Language:English
Published: University of Cincinnati / OhioLINK 2007
Subjects:
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528
Description
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