CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES
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| Language: | English |
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Wright State University / OhioLINK
2012
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| Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392 |
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ndltd-OhioLink-oai-etd.ohiolink.edu-wright13577633922021-08-03T05:20:49Z CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES Owsley, Jack Lee, III Electrical Engineering In this thesis the characteristics of five bulk semi-insulated doped gallium nitride samples provided by Kyma Technologies, Inc were explored. The five GaN samples were grown on sapphire substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was found that they all showed a strong absorption at 518 nm. Thus, time-resolved differential transmission measurements were conducted at this wavelength using the second harmonic generation (SHG) of a femtosecond ytterbium-doped fiber amplifier (YDFA), mode-locked laser. Relaxation times between 24 and 433 picoseconds were obtained. Finally, four point probe measurements were performed in the order to determine the bulk resistivity of the GaN samples. The measured values are within the order of 10^6 ¿¿*m for all samples. 2012 English text Wright State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392 http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws. |
| collection |
NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Electrical Engineering |
| spellingShingle |
Electrical Engineering Owsley, Jack Lee, III CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES |
| author |
Owsley, Jack Lee, III |
| author_facet |
Owsley, Jack Lee, III |
| author_sort |
Owsley, Jack Lee, III |
| title |
CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES |
| title_short |
CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES |
| title_full |
CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES |
| title_fullStr |
CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES |
| title_full_unstemmed |
CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES |
| title_sort |
characterization of doped gallium nitride substrates |
| publisher |
Wright State University / OhioLINK |
| publishDate |
2012 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392 |
| work_keys_str_mv |
AT owsleyjackleeiii characterizationofdopedgalliumnitridesubstrates |
| _version_ |
1719418938032390144 |