A Method to Diffuse Magnesium Into Silicon
碩士 === 淡江大學 === 物理學系 === 62 === In this thesis a method to diffuse magnesium, a group II element, into undoped silicon is presented. Pure magnesium was deposited by evaporation on the sample surface. After being heated at 1200℃ for 2 hours in a helium atmosphere and then quenched in liauid nitroge...
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Format: | Others |
Language: | en_US |
Online Access: | http://ndltd.ncl.edu.tw/handle/88855536115537493507 |
Summary: | 碩士 === 淡江大學 === 物理學系 === 62 === In this thesis a method to diffuse magnesium, a group II element, into undoped silicon is presented. Pure magnesium was deposited by evaporation on the sample surface. After being heated at 1200℃ for 2 hours in a helium atmosphere and then quenched in liauid nitrogen, the sample was found to become from high resistivity to low resistivity.
Hall effect measurement shows that magnesium is a double donor in silicon and enters into silicon interstitially.
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