The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD

碩士 === 國立成功大學 === 電機工程研究所 === 78 ===

Bibliographic Details
Main Authors:	LI,ZHEN-WEI, 李振偉
Other Authors:	WU,TIAN-SHOU
Format:	Others
Language:	zh-TW
Published:	1991
Online Access:	http://ndltd.ncl.edu.tw/handle/56766635516325898827

id	ndltd-TW-078NCKU2442130
record_format	oai_dc
spelling	ndltd-TW-078NCKU24421302015-10-13T15:21:03Z http://ndltd.ncl.edu.tw/handle/56766635516325898827 The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD 以低壓有機金屬氣相磊晶法成長砷化鎵銦/砷化鋁銦薄膜及其物性之研究 LI,ZHEN-WEI 李振偉碩士國立成功大學電機工程研究所 78 WU,TIAN-SHOU 吳添壽 1991 學位論文 ; thesis 82 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立成功大學 === 電機工程研究所 === 78 ===
author2	WU,TIAN-SHOU
author_facet	WU,TIAN-SHOU LI,ZHEN-WEI 李振偉
author	LI,ZHEN-WEI 李振偉
spellingShingle	LI,ZHEN-WEI 李振偉 The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD
author_sort	LI,ZHEN-WEI
title	The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD
title_short	The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD
title_full	The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD
title_fullStr	The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD
title_full_unstemmed	The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD
title_sort	study of ingaas/inalas/inp epitaxiallayers by low-pressure mocvd
publishDate	1991
url	http://ndltd.ncl.edu.tw/handle/56766635516325898827
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The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD

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