Low Firing Aluminum Nitride Substrate for Micro- electronics

• Main Authors: Wan-Ting Huang, 黃婉婷
• Other Authors: Y.H Chang ; S.L Fu ; M.P Houng
• Format: Others
• Language: zh-TW
• Published: 1993
• Online Access: http://ndltd.ncl.edu.tw/handle/56408267928099648064

碩士 === 國立成功大學 === 材料科學(工程)研究所 === 81 === Aluminum nitride powders were blended with three diff- erent kinds of low melting glasses respectively 闡 leaded glass (PBSG) and unleaded glasses designated as BSG1 and BSG2 . Their compacts were sintered in air between 700C to 1100C for periods from 7.5 minutes to 240 minutes. The sintering behaviors and physical properties of the sintered compacts were examined and studied . Results show that there are complicate interactions between the PBSG and AlN phases causing the AlN phase to decompose . For having over 10 % shrinkage , the addi- tion of PBSG must be greater than 70 wt% . Dense sintered specimens were obtained by using BSG1 or BSG2 with amounts greater than 50 wt% and sintered at temperature of 700C- 800C for 1 hr. From X-ray diffraction analysis, aluminum nitride still retained its crystallinity . The wetting of low- melting glass to AlN surface was examined by SEM obser- vations . The experiments show that the samples containing 55 wt% BSG2 sintered at 800C for 3 hrs. possess suitable elec- trical properties as : the electrical resistivity is about 10 ohmn-cm , the relative dielectric constant is about 7 (1 MHz), and the thermal expansion coefficient is about 6x10 /C. It can be adopted as a material of low temperature cofirable multilayer substrate for microelectronics packa- ging .