The Preparation of AlN and ZnO Films by R.F. Magnetron Sputtering

• Main Authors: Jenq-Yih Lin, 林政毅
• Other Authors: Pang Lin
• Format: Others
• Language: zh-TW
• Published: 1993
• Online Access: http://ndltd.ncl.edu.tw/handle/25607693112986911435

碩士 === 國立交通大學 === 材料科學(工程)研究所 === 81 === In this research, the AlN and ZnO films have been prepared by R. F. plane magnetron sputtering technique. The sputtering parameters such as R.F power, toal gas pressure, substrate temperature were varied to controll the preferred orientation of the grown films. The Crystal structure of films were analyzed by X-ray diffractometer and the film fiber texture were obsvered by scanning electron microscope, the optical absorption were measured by FTIR. A growth model associated with an equation <l>=A*exp(Q/2kT)*t^1/2, was proposed to explain the influence of various depostion parameters on growth habit. The results of X-ray rocking curve analyses indicated a tilted fiber texture of films were due to the oblique deposition.