The Study of Channel Doping and Hydrogenation Effects on Polysilicon Thin Film Transistors
碩士 === 國立交通大學 === 電子研究所 === 81 === With regard to the unpassivated poly-Si TFTs with undoped channel, the magnitude of the threshold voltage is greater than 5V and the leakage current is usually not available. Thus the necessary channel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77528471304542503129 |