The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts

The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts

博士 === 國立交通大學 === 電子研究所 === 81 ===

Bibliographic Details
Main Authors: LUO, YONG-SONG, 駱永松
Other Authors: 吳慶源
Format: Others
Language:zh-TW
Published: 1993
Online Access:http://ndltd.ncl.edu.tw/handle/63471315248943693963
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spelling ndltd-TW-081NTU022450022016-02-10T04:09:03Z http://ndltd.ncl.edu.tw/handle/63471315248943693963 The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts 非晶矽雙層結構用於自動校準鈦及鈷之矽化技術與一種用於金屬/半導體接觸的新計測方法 LUO, YONG-SONG 駱永松 博士 國立交通大學 電子研究所 81 吳慶源 1993 學位論文 ; thesis 193 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立交通大學 === 電子研究所 === 81 ===
author2 吳慶源
author_facet 吳慶源
LUO, YONG-SONG
駱永松
author LUO, YONG-SONG
駱永松
spellingShingle LUO, YONG-SONG
駱永松
The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts
author_sort LUO, YONG-SONG
title The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts
title_short The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts
title_full The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts
title_fullStr The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts
title_full_unstemmed The self-aligned Ti and Co silicidation technologies using a-Si bilayer structure and a new characterization methodology for metal/semiconductor contacts
title_sort self-aligned ti and co silicidation technologies using a-si bilayer structure and a new characterization methodology for metal/semiconductor contacts
publishDate 1993
url http://ndltd.ncl.edu.tw/handle/63471315248943693963
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