Deep level analysis of MBE grown InAlAs strain layer
碩士 === 國立臺灣大學 === 電機工程研究所 === 81 ===
Main Authors: | LIU, JIN-XIANG, 劉進祥 |
---|---|
Other Authors: | LIN, HAO-XIONG |
Format: | Others |
Language: | zh-TW |
Published: |
1993
|
Online Access: | http://ndltd.ncl.edu.tw/handle/24919044186144702130 |
Similar Items
-
The Application of Low Frequency Noise spectroscopy on device trap analysis and The Characteristics of InAlAs、InAlGaAs lattice match to InP grown by MBE
by: Chung-Hung Chen, et al.
Published: (1994) -
Plasmons and phonons in MBE-grown layered GaAs and AlGaAs structures
by: Gray, Zenon
Published: (1990) -
Role of deep level traps on the photocapacitance characteristics of InAs quantum dots covered by an InAlAs layer
by: Yang, Chia-Wei, et al.
Published: (2013) -
Highly tensile-strained Ge/InAlAs nanocomposites
by: Daehwan Jung, et al.
Published: (2017-01-01) -
Highly tensile-strained Ge/InAlAs nanocomposites
by: Jung, Daehwan, et al.
Published: (2017)