| Summary: | 碩士 === 大同工學院 === 材料科學(工程)研究所 === 81 === The YBCO was deposited on silicon (100) by way of on-axis
magnetron DC sputtering with the YSZ as the buffer layer. The
thickness of YSZ and YBCO thin films were about 1500 A. The
inteaction between YSZ and YBCO layer was found, it was BaZrO
,its thickness was about 300 A after YBCO 2.5 hr deposition.
The optimum conditions for YSZ thin film deposition was as
following : Ts = 680 C, P = 0.06 torr, gas : pure Ar, T-S
distance = 6 - 7 cm, RF power = 150 Watt. These conditions
could produce YSZ(200) thin film. The optimum conditions for
YBCO thin film deposition on YSZ/Si(100) were as following : Ts
= 640 - 650 C, P = 0.5 - 0.6 torr, gas ratio Ar : O = 2 : 1 -
1 : 1, distance between substrate and target = 2.5 - 3 cm,
annealing temperature = 450 C, annealing time = 30 min,
annealing atmosphere : 1 Atm O , target composition : Y1,2,3,
then we could get YBCO thin film with Tc0 = 86 K, lattice
constant of C axis = 11.794A. The high Ts (690 C) would produce
BaZrO (110),and optimum Ts(640 C) produce BaZrO (200) with
plane space 2.147 A .
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