Epitaxial Growth and Tunneling Characteristics of the YBa2Cu3O7- x/SrTiO3/YBa2Cu3O7-x Trilayered-Type Junction
碩士 === 中原大學 === 應用物理學系 === 82 === We report the growth of the insulating SrTiO3 (STO) thin films and the YBa2Cu3O7-x(YBCO)/STO heteroepitaxial multilayer struc- tures using the in-situ pulsed XeCl excimer laser (λ=308 nm， pulse duration τ=10ns ) ablation...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00838809011976012207 |
| Summary: | 碩士 === 中原大學 === 應用物理學系 === 82 === We report the growth of the insulating SrTiO3 (STO) thin films
and the YBa2Cu3O7-x(YBCO)/STO heteroepitaxial multilayer struc-
tures using the in-situ pulsed XeCl excimer laser (λ=308 nm，
pulse duration τ=10ns ) ablation technique. The energy
density on the target was approximately 1.5J/C㎡. MgO(100) was
used as our subsate. The obtained YBCO/STO/YBCO trilayer
structures is demonstracted. Epitaxial YBCO films on STO//MgO
and STO/YBCO//MgO have a zero resistance temperature of 88K.
Current-Votage curves of the junction are qualitatively
consistent with the dc Josephson effect behavior at low
temperature. The IcRn product of the junctions typically was
2.4mV at 5.3K.The critical current of junction as a function of
temperature-the data fit best to Ic(T)∼(1-T/Tc)0.99 .
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