| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === Presented here is an analysis simulation tool for Charge-
coupled devices(CCD), including charge capacity model and
charge transfer inefficiency analytical model with and without
considering effective fat zero (dark current). The surface
potential with no minority carrier in our simulation is so easy
to get by Fourier series, without using numerical method and
the CPU time is very greatly reduced. We firstly propose a
simple charge capacity model to simulate signal-charge
distribution and verified by numerical results. And we propose
a new method to determine the minimum fringing field from the
final time constant. By this new method and charge-signal
distribution we can explain the controversy of the result of
the short gate length. In addition, simulation results shows
that a trade-off between the transfer efficiency and the
magnitude of signal charge due to the charge screening effect.
Finally, a analytical model of wide range temperature is
proposed and simulation results matches the experimental data
very good. By this model, we can obtain a complete energy-
dependent interface state distribution.
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