Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing
碩士 === 國立交通大學 === 電子研究所 === 82 === The La-modified lead titanate(PLT) with various lanthanum contents(0~28mol%)has been prepared by sol-gel processing. The PLT thin films deposited on Pt/Ti/Si substrate at 600?C for 30 min. possess crackinn...
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ndltd-TW-082NCTU04300642016-07-18T04:09:39Z http://ndltd.ncl.edu.tw/handle/81293805441719414572 Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing 以溶膠-凝膠法製備PLT鐵電薄膜及其電性之研究 Jaw-Chyung Leu 呂照全 碩士 國立交通大學 電子研究所 82 The La-modified lead titanate(PLT) with various lanthanum contents(0~28mol%)has been prepared by sol-gel processing. The PLT thin films deposited on Pt/Ti/Si substrate at 600?C for 30 min. possess crackinng-free, uniform grain size(about 100nm), and flat surface properties. The dielectric constants of the PLT thin films are 198, 256, 370, and 588 for PLT0, PLT10, PLT20, and PLT28, respectively. The dominant conductance mechanism of the PLT thin film has also been discussed. The conventional integrated-circuit processing has been applied to fabricated the PLT thin film capacitors. The charge storage densities of PLT thin film capacitors are 0.35, 0.46, 0.66, and 1.03uC/cm2-V for PLT0, PLT10, PLT20, and PLT28, respectively. Tseung-Yuen Tseng 曾俊元 1994 學位論文 ; thesis 77 en_US |
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碩士 === 國立交通大學 === 電子研究所 === 82 === The La-modified lead titanate(PLT) with various lanthanum
contents(0~28mol%)has been prepared by sol-gel processing. The
PLT thin films deposited on Pt/Ti/Si substrate at 600?C for 30
min. possess crackinng-free, uniform grain size(about 100nm),
and flat surface properties. The dielectric constants of the
PLT thin films are 198, 256, 370, and 588 for PLT0, PLT10,
PLT20, and PLT28, respectively. The dominant conductance
mechanism of the PLT thin film has also been discussed. The
conventional integrated-circuit processing has been applied to
fabricated the PLT thin film capacitors. The charge storage
densities of PLT thin film capacitors are 0.35, 0.46, 0.66, and
1.03uC/cm2-V for PLT0, PLT10, PLT20, and PLT28, respectively.
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author2 |
Tseung-Yuen Tseng |
author_facet |
Tseung-Yuen Tseng Jaw-Chyung Leu 呂照全 |
author |
Jaw-Chyung Leu 呂照全 |
spellingShingle |
Jaw-Chyung Leu 呂照全 Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing |
author_sort |
Jaw-Chyung Leu |
title |
Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing |
title_short |
Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing |
title_full |
Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing |
title_fullStr |
Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing |
title_full_unstemmed |
Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing |
title_sort |
preparation and electrical properties of plt ferroelectric thin films by sol-gel processing |
publishDate |
1994 |
url |
http://ndltd.ncl.edu.tw/handle/81293805441719414572 |
work_keys_str_mv |
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