Preparation and electrical properties of PLT ferroelectric thin films by sol-gel processing

• Main Authors: Jaw-Chyung Leu, 呂照全
• Other Authors: Tseung-Yuen Tseng
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/81293805441719414572

碩士 === 國立交通大學 === 電子研究所 === 82 === The La-modified lead titanate(PLT) with various lanthanum contents(0~28mol%)has been prepared by sol-gel processing. The PLT thin films deposited on Pt/Ti/Si substrate at 600?C for 30 min. possess crackinng-free, uniform grain size(about 100nm), and flat surface properties. The dielectric constants of the PLT thin films are 198, 256, 370, and 588 for PLT0, PLT10, PLT20, and PLT28, respectively. The dominant conductance mechanism of the PLT thin film has also been discussed. The conventional integrated-circuit processing has been applied to fabricated the PLT thin film capacitors. The charge storage densities of PLT thin film capacitors are 0.35, 0.46, 0.66, and 1.03uC/cm2-V for PLT0, PLT10, PLT20, and PLT28, respectively.