| Summary: | 碩士 === 國立臺灣科技大學 === 工程技術研究所 === 82 === A systematic study of effects of temperature on power tran-
sistors is presented. A comprehensive experimental characte-
rization of MOSFEF''s electrical parameters over the temperature
range of 8?c-48?c is reported. Simple , analytic models are
used to explain the observed behavior and to offer physical in-
sight into the effect of temperature. The temperature-dependent
parameters include the threshold voltage , mobility ,
saturation current , transcondutance , on - state resistance ,
gate-voltage swing S of subthreshold current which is related
to the tempe- rature dependence of interface trap capacitance.
Dynamic temperature testing on power MOSFETs is also pre-
sented . The test method is based on temperature sensitive
elec- trical parameters.We have chosen the gate-source voltage
as the temperature sensitive parameter and analyzed the
measured result .
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