The Study of Si Bulk and TFT Magnetic Field Sensors

• Main Authors: Jz-Jan Jeng, 鄭志展
• Other Authors: Ci-Ling Pan,Tan Fu Lei
• Format: Others
• Language: en_US
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/04510476697157321865

碩士 === 國立交通大學 === 光電(科學)研究所 === 83 === Magnetic field sensors which exploit the galvanomagnetic ef- fect due to the Lorentz force on charge carriers have been pres- ent for many years.In this study,magnetic field sensors of two structures have been implemented and optimized in order to inve- stigate the possibility of increasing the symmetry of device se- nsitivities in three directions for 3-D magnetic- field sensors. For Hall voltage output format,the p+ well of the second struct- ure incteases the sensitivities in x-,y- and z-directions and improve the symmtry of sensitivities.For differential current output format,the p+ well can only increase the sensitivities for an in-plane magnetic-field applied. To improve the magnetic responses to magnetic field perpendicular to the , wafer surface ,Co-Ni coating is used and the sensitivities for a magnetic field applied perpendicularly to the wafer surface are ten times more than that of a uncoated device.Further,a 2-drain have been implemented for TFT magnetic field sensors. Experimental results for this type of sensors indicate that there is a maximum value of sensitivity for various gate voltage.