The Study of Si Bulk and TFT Magnetic Field Sensors
碩士 === 國立交通大學 === 光電(科學)研究所 === 83 === Magnetic field sensors which exploit the galvanomagnetic ef- fect due to the Lorentz force on charge carriers have been pres- ent for many years.In this study,magnetic field sensors of two structures h...
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ndltd-TW-083NCTU01230292015-10-13T12:53:37Z http://ndltd.ncl.edu.tw/handle/04510476697157321865 The Study of Si Bulk and TFT Magnetic Field Sensors 矽基板與薄膜電晶體磁場感測器之研究 Jz-Jan Jeng 鄭志展 碩士 國立交通大學 光電(科學)研究所 83 Magnetic field sensors which exploit the galvanomagnetic ef- fect due to the Lorentz force on charge carriers have been pres- ent for many years.In this study,magnetic field sensors of two structures have been implemented and optimized in order to inve- stigate the possibility of increasing the symmetry of device se- nsitivities in three directions for 3-D magnetic- field sensors. For Hall voltage output format,the p+ well of the second struct- ure incteases the sensitivities in x-,y- and z-directions and improve the symmtry of sensitivities.For differential current output format,the p+ well can only increase the sensitivities for an in-plane magnetic-field applied. To improve the magnetic responses to magnetic field perpendicular to the , wafer surface ,Co-Ni coating is used and the sensitivities for a magnetic field applied perpendicularly to the wafer surface are ten times more than that of a uncoated device.Further,a 2-drain have been implemented for TFT magnetic field sensors. Experimental results for this type of sensors indicate that there is a maximum value of sensitivity for various gate voltage. Ci-Ling Pan,Tan Fu Lei 潘犀靈,雷添福 1995 學位論文 ; thesis 69 en_US |
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碩士 === 國立交通大學 === 光電(科學)研究所 === 83 === Magnetic field sensors which exploit the galvanomagnetic ef-
fect due to the Lorentz force on charge carriers have been
pres- ent for many years.In this study,magnetic field sensors
of two structures have been implemented and optimized in order
to inve- stigate the possibility of increasing the symmetry of
device se- nsitivities in three directions for 3-D magnetic-
field sensors. For Hall voltage output format,the p+ well of
the second struct- ure incteases the sensitivities in x-,y- and
z-directions and improve the symmtry of sensitivities.For
differential current output format,the p+ well can only
increase the sensitivities for an in-plane magnetic-field
applied. To improve the magnetic responses to magnetic field
perpendicular to the , wafer surface ,Co-Ni coating is used and
the sensitivities for a magnetic field applied perpendicularly
to the wafer surface are ten times more than that of a uncoated
device.Further,a 2-drain have been implemented for TFT magnetic
field sensors. Experimental results for this type of sensors
indicate that there is a maximum value of sensitivity for
various gate voltage.
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author2 |
Ci-Ling Pan,Tan Fu Lei |
author_facet |
Ci-Ling Pan,Tan Fu Lei Jz-Jan Jeng 鄭志展 |
author |
Jz-Jan Jeng 鄭志展 |
spellingShingle |
Jz-Jan Jeng 鄭志展 The Study of Si Bulk and TFT Magnetic Field Sensors |
author_sort |
Jz-Jan Jeng |
title |
The Study of Si Bulk and TFT Magnetic Field Sensors |
title_short |
The Study of Si Bulk and TFT Magnetic Field Sensors |
title_full |
The Study of Si Bulk and TFT Magnetic Field Sensors |
title_fullStr |
The Study of Si Bulk and TFT Magnetic Field Sensors |
title_full_unstemmed |
The Study of Si Bulk and TFT Magnetic Field Sensors |
title_sort |
study of si bulk and tft magnetic field sensors |
publishDate |
1995 |
url |
http://ndltd.ncl.edu.tw/handle/04510476697157321865 |
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