Selective Epitaxial Growth of Compound Semiconductors Using Low- Pressure Metalorganic Chemical Vapor Deposition

博士 === 國立交通大學 === 電子研究所 === 83 === We have done experimebtal studies on the epitaxial growth and selective epitaxial growth ( SEG ) of GaInP by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ) using ethyldimethylindium ( EDMI ), trimethyli...

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Bibliographic Details
Main Authors: Shih-Hsiung Chan, 詹世雄
Other Authors: Simon Min Sze, Chun-Yen Chang
Format: Others
Language:en_US
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/73212114898589007465