| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, high aspect-ratio microtips with sharp
curvature have been formed employing the semi-anisotropic
plasma etching and the oxidation sharpening.To improve the
emission efficiency and stability,the surface of silicon
microtips coated with various materials including metal, SiC
and diamond films were investigated.Both the electrical and
material properties were characterized and analyzed in details
to survey the efficiency of different surface coatings. At the
anode bias of 1100V and constant anode-to-cathode spacing of 30
um, the emission currents of Cr-clad microtips are twenty times
higher than those of un-coated ones.Furthermore, the emission
currents of diamond-clad microtips are superior to both Cr-clad
and pure Si ones.Such significant improvement of the I-V
property could provide to the fabrication and application of
the field emission triodes. In addition to the fabrication of
the microtips, the gated field emitter arrays with deep-
submicron gate aperture have been successfully fabricated using
a new-aligned process.Various device structures with volcano-
shaped gate were fabricated by method.
|
|---|
