The studies of YBa2Cu3O7-x thin film on the optical detector
碩士 === 國立中山大學 === 電機工程研究所 === 83 === In this study,YBCO HTSC thin film was grown on STO single crystal substrates by RF sputtering technique.The films were fabricated to be as optical detectors,and the opto-electrical properties were studie...
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ndltd-TW-083NSYSU4420132015-10-13T12:26:19Z http://ndltd.ncl.edu.tw/handle/79268333579685581966 The studies of YBa2Cu3O7-x thin film on the optical detector 釔鋇銅氧薄膜作為光檢測元件之研究 Hong, Meng Tsong 洪夢聰 碩士 國立中山大學 電機工程研究所 83 In this study,YBCO HTSC thin film was grown on STO single crystal substrates by RF sputtering technique.The films were fabricated to be as optical detectors,and the opto-electrical properties were studied.The grown film exhibits a good structure ,a good surface morphology,and a narrow transition width.The opto-electrical properties of detectors were measured by means of varies radiations with wavelength from 633nm to 3500nm,and the ac voltage difference is measured by the lock-in amplifier. Opto-electrical properties of the device will be affected by the bias current.By tunning the bias current,we could vary the best operation temperature.The responsivity of the device is as high as 2350V/W;its value of NEP is small and has high value of detectivity.For various light sources, responsivity of the device is independent of wavelength. Chen, Ying Chung 陳英忠 1995 學位論文 ; thesis 55 zh-TW |
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zh-TW |
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Others
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碩士 === 國立中山大學 === 電機工程研究所 === 83 === In this study,YBCO HTSC thin film was grown on STO single
crystal substrates by RF sputtering technique.The films were
fabricated to be as optical detectors,and the opto-electrical
properties were studied.The grown film exhibits a good
structure ,a good surface morphology,and a narrow transition
width.The opto-electrical properties of detectors were measured
by means of varies radiations with wavelength from 633nm to
3500nm,and the ac voltage difference is measured by the lock-in
amplifier. Opto-electrical properties of the device will be
affected by the bias current.By tunning the bias current,we
could vary the best operation temperature.The responsivity of
the device is as high as 2350V/W;its value of NEP is small and
has high value of detectivity.For various light sources,
responsivity of the device is independent of wavelength.
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author2 |
Chen, Ying Chung |
author_facet |
Chen, Ying Chung Hong, Meng Tsong 洪夢聰 |
author |
Hong, Meng Tsong 洪夢聰 |
spellingShingle |
Hong, Meng Tsong 洪夢聰 The studies of YBa2Cu3O7-x thin film on the optical detector |
author_sort |
Hong, Meng Tsong |
title |
The studies of YBa2Cu3O7-x thin film on the optical detector |
title_short |
The studies of YBa2Cu3O7-x thin film on the optical detector |
title_full |
The studies of YBa2Cu3O7-x thin film on the optical detector |
title_fullStr |
The studies of YBa2Cu3O7-x thin film on the optical detector |
title_full_unstemmed |
The studies of YBa2Cu3O7-x thin film on the optical detector |
title_sort |
studies of yba2cu3o7-x thin film on the optical detector |
publishDate |
1995 |
url |
http://ndltd.ncl.edu.tw/handle/79268333579685581966 |
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