Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
碩士 === 國立中山大學 === 電機工程研究所 === 83 === To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in cir...
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ndltd-TW-083NSYSU4420422015-10-13T12:26:19Z http://ndltd.ncl.edu.tw/handle/61214685343165263682 Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs 針對完全空乏式SOI金氧半電晶體的自動化參數焠取 Ho, Ming Yo 何明佑 碩士 國立中山大學 電機工程研究所 83 To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in circuit simulator, such as SPICE. The other is to evaluate that process parameters is good or not. Because the SOI MOSFETs have two gates to control device behavior , it is more difficult to extract parameters in SOI MOSFETs than bulk MOSFETs. We have to consider that coupling effect between two surfaces in SOI MOSFETs, so do shielding effect between two channels in SOI MOSFETs. In principle, we divided parameters extraction into several parts to do, (1)In Fibd and fdBI modes, the current expressions in lin- ear region and saturation must be deduced firstly. (2)Using three -point measure technique in linear region to extract parameters, we utiliz iteration method to decide parameters in saturation region by three data points. (3)We can decide the parameters wan- ted from relationship of device parameters and model paraters. (4)To combine the expressions of model parameters and model equa- tions into a equation system, then we solve this equation system to get some parameters which are not derived directly. We use 19 data points in the input characteristic curve and outp- ut characteristic curve of SOI MOSFETs, 24 parameters are extrac- ted, both of devices parameters and model parameters are included .These parameters include threshold voltage in front and back su- rfaces, maximum saturation velocity, mobility in low field, and mobility degradation factor of front channel and back channel ca- rriers,...etc. By comparing the extracted parameters and setted parameters in model, we can result this parameter extraction algorithm has a good precision, and it has high efficiency for a short extraction time. Lin, Jyi Tsong 林吉聰 1995 學位論文 ; thesis 63 zh-TW |
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碩士 === 國立中山大學 === 電機工程研究所 === 83 === To extract parameters of fully-depleted SOI MOSFETs devices is
my purpose in this thesis for master. These extracted
parameters can be used in two things, one is to simulate the
circuit design- ed in circuit simulator, such as SPICE. The
other is to evaluate that process parameters is good or not.
Because the SOI MOSFETs have two gates to control device
behavior , it is more difficult to extract parameters in SOI
MOSFETs than bulk MOSFETs. We have to consider that coupling
effect between two surfaces in SOI MOSFETs, so do shielding
effect between two channels in SOI MOSFETs. In principle, we
divided parameters extraction into several parts to do, (1)In
Fibd and fdBI modes, the current expressions in lin- ear region
and saturation must be deduced firstly. (2)Using three -point
measure technique in linear region to extract parameters, we
utiliz iteration method to decide parameters in saturation
region by three data points. (3)We can decide the parameters
wan- ted from relationship of device parameters and model
paraters. (4)To combine the expressions of model parameters and
model equa- tions into a equation system, then we solve this
equation system to get some parameters which are not derived
directly. We use 19 data points in the input characteristic
curve and outp- ut characteristic curve of SOI MOSFETs, 24
parameters are extrac- ted, both of devices parameters and
model parameters are included .These parameters include
threshold voltage in front and back su- rfaces, maximum
saturation velocity, mobility in low field, and mobility
degradation factor of front channel and back channel ca-
rriers,...etc. By comparing the extracted parameters and setted
parameters in model, we can result this parameter extraction
algorithm has a good precision, and it has high efficiency for
a short extraction time.
|
author2 |
Lin, Jyi Tsong |
author_facet |
Lin, Jyi Tsong Ho, Ming Yo 何明佑 |
author |
Ho, Ming Yo 何明佑 |
spellingShingle |
Ho, Ming Yo 何明佑 Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs |
author_sort |
Ho, Ming Yo |
title |
Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs |
title_short |
Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs |
title_full |
Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs |
title_fullStr |
Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs |
title_full_unstemmed |
Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs |
title_sort |
automatic parameter extraction of fully-depleted soi mosfets |
publishDate |
1995 |
url |
http://ndltd.ncl.edu.tw/handle/61214685343165263682 |
work_keys_str_mv |
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