Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs

碩士 === 國立中山大學 === 電機工程研究所 === 83 === To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in cir...

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Main Authors: Ho, Ming Yo, 何明佑
Other Authors: Lin, Jyi Tsong
Format: Others
Language:zh-TW
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/61214685343165263682
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spelling ndltd-TW-083NSYSU4420422015-10-13T12:26:19Z http://ndltd.ncl.edu.tw/handle/61214685343165263682 Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs 針對完全空乏式SOI金氧半電晶體的自動化參數焠取 Ho, Ming Yo 何明佑 碩士 國立中山大學 電機工程研究所 83 To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in circuit simulator, such as SPICE. The other is to evaluate that process parameters is good or not. Because the SOI MOSFETs have two gates to control device behavior , it is more difficult to extract parameters in SOI MOSFETs than bulk MOSFETs. We have to consider that coupling effect between two surfaces in SOI MOSFETs, so do shielding effect between two channels in SOI MOSFETs. In principle, we divided parameters extraction into several parts to do, (1)In Fibd and fdBI modes, the current expressions in lin- ear region and saturation must be deduced firstly. (2)Using three -point measure technique in linear region to extract parameters, we utiliz iteration method to decide parameters in saturation region by three data points. (3)We can decide the parameters wan- ted from relationship of device parameters and model paraters. (4)To combine the expressions of model parameters and model equa- tions into a equation system, then we solve this equation system to get some parameters which are not derived directly. We use 19 data points in the input characteristic curve and outp- ut characteristic curve of SOI MOSFETs, 24 parameters are extrac- ted, both of devices parameters and model parameters are included .These parameters include threshold voltage in front and back su- rfaces, maximum saturation velocity, mobility in low field, and mobility degradation factor of front channel and back channel ca- rriers,...etc. By comparing the extracted parameters and setted parameters in model, we can result this parameter extraction algorithm has a good precision, and it has high efficiency for a short extraction time. Lin, Jyi Tsong 林吉聰 1995 學位論文 ; thesis 63 zh-TW
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description 碩士 === 國立中山大學 === 電機工程研究所 === 83 === To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in circuit simulator, such as SPICE. The other is to evaluate that process parameters is good or not. Because the SOI MOSFETs have two gates to control device behavior , it is more difficult to extract parameters in SOI MOSFETs than bulk MOSFETs. We have to consider that coupling effect between two surfaces in SOI MOSFETs, so do shielding effect between two channels in SOI MOSFETs. In principle, we divided parameters extraction into several parts to do, (1)In Fibd and fdBI modes, the current expressions in lin- ear region and saturation must be deduced firstly. (2)Using three -point measure technique in linear region to extract parameters, we utiliz iteration method to decide parameters in saturation region by three data points. (3)We can decide the parameters wan- ted from relationship of device parameters and model paraters. (4)To combine the expressions of model parameters and model equa- tions into a equation system, then we solve this equation system to get some parameters which are not derived directly. We use 19 data points in the input characteristic curve and outp- ut characteristic curve of SOI MOSFETs, 24 parameters are extrac- ted, both of devices parameters and model parameters are included .These parameters include threshold voltage in front and back su- rfaces, maximum saturation velocity, mobility in low field, and mobility degradation factor of front channel and back channel ca- rriers,...etc. By comparing the extracted parameters and setted parameters in model, we can result this parameter extraction algorithm has a good precision, and it has high efficiency for a short extraction time.
author2 Lin, Jyi Tsong
author_facet Lin, Jyi Tsong
Ho, Ming Yo
何明佑
author Ho, Ming Yo
何明佑
spellingShingle Ho, Ming Yo
何明佑
Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
author_sort Ho, Ming Yo
title Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
title_short Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
title_full Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
title_fullStr Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
title_full_unstemmed Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
title_sort automatic parameter extraction of fully-depleted soi mosfets
publishDate 1995
url http://ndltd.ncl.edu.tw/handle/61214685343165263682
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