Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs
碩士 === 國立中山大學 === 電機工程研究所 === 83 === To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in cir...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1995
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Online Access: | http://ndltd.ncl.edu.tw/handle/61214685343165263682 |