Automatic Parameter Extraction of Fully-Depleted SOI MOSFETs

碩士 === 國立中山大學 === 電機工程研究所 === 83 === To extract parameters of fully-depleted SOI MOSFETs devices is my purpose in this thesis for master. These extracted parameters can be used in two things, one is to simulate the circuit design- ed in cir...

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Bibliographic Details
Main Authors: Ho, Ming Yo, 何明佑
Other Authors: Lin, Jyi Tsong
Format: Others
Language:zh-TW
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/61214685343165263682