An Improved In0.5Ga0.5P/GaAs Heterostructure-Emitter Bipolar Transistors Utilizing GaAs Spacers
碩士 === 國立成功大學 === 電機工程研究所 === 84 === The conventional HBT suffers from larger offset voltage , resulting in unnecessary power consumption . In this thesis , we improve the common-emitter offset voltage by using heterostructure-emitter bipol...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77964503790648095243 |