Study on the Characteristics and Reliability of Hydrogenated Amorphous Silicon Thin Film Transistors

• Main Authors: Tai ,Ya-Hsiang, 戴亞翔
• Other Authors: Huang-Chung Cheng
• Format: Others
• Language: en_US
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/87684650807008693742

博士 === 國立交通大學 === 電子研究所 === 84 === This thesis presents the factors which can affect the characteristics of the hydrogenated amorphous silicon (a-Si :H) thin film transistors (TFTs), including the gate dielectrics the a-Si:H film, and interfaces, etc. The reliability issue of these were also studied. By comparing the various behaviors of the TFTs with varied gate dielectric and a-Si:H films, it is confirmed that the instability mechanisms of the a-Si:H TFTs are charge trapping and the state creation. The charge trapping can rigidly shift the transfer characteristics of the TFTs. The state creation can degrade the subthreshold behaviors of the TFTs. The defect pool in the a-Si:H is also found to be an important instability mechanism. In addition, the reliability and characteristics of the capacitors embedded in the structure of TFTs were investigated to realize their correspondences.