Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap

Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap

Show other versions (1)

碩士 === 國立中山大學 === 材料科學工程研究所 === 84 ===

Bibliographic Details
Main Authors: WANG, CHUNG LIN, 王中林
Other Authors: HSIEH, K. Y.
Format: Others
Language:zh-TW
Published: 1996
Online Access:http://ndltd.ncl.edu.tw/handle/03884082800595415626
id ndltd-TW-084NSYS4058001
record_format oai_dc
spelling ndltd-TW-084NSYS40580012015-10-13T14:34:58Z http://ndltd.ncl.edu.tw/handle/03884082800595415626 Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap 覆蓋物對熱效應所引發砷化鋁鎵量子井結構無序現象之研究 WANG, CHUNG LIN 王中林 碩士 國立中山大學 材料科學工程研究所 84 HSIEH, K. Y. 謝光宇 1996 學位論文 ; thesis 55 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中山大學 === 材料科學工程研究所 === 84 ===
author2 HSIEH, K. Y.
author_facet HSIEH, K. Y.
WANG, CHUNG LIN
王中林
author WANG, CHUNG LIN
王中林
spellingShingle WANG, CHUNG LIN
王中林
Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
author_sort WANG, CHUNG LIN
title Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
title_short Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
title_full Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
title_fullStr Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
title_full_unstemmed Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
title_sort study for vacancy-induced layer disordering of algaas-gaas quantum well heterostructure that utilizes sio2 cap
publishDate 1996
url http://ndltd.ncl.edu.tw/handle/03884082800595415626
work_keys_str_mv AT wangchunglin studyforvacancyinducedlayerdisorderingofalgaasgaasquantumwellheterostructurethatutilizessio2cap
AT wángzhōnglín studyforvacancyinducedlayerdisorderingofalgaasgaasquantumwellheterostructurethatutilizessio2cap
AT wangchunglin fùgàiwùduìrèxiàoyīngsuǒyǐnfāshēnhuàlǚjiāliàngzijǐngjiégòuwúxùxiànxiàngzhīyánjiū
AT wángzhōnglín fùgàiwùduìrèxiàoyīngsuǒyǐnfāshēnhuàlǚjiāliàngzijǐngjiégòuwúxùxiànxiàngzhīyánjiū
_version_ 1717753982516985856

Similar Items