Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
碩士 === 國立中山大學 === 材料科學工程研究所 === 84 ===
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Online Access: | http://ndltd.ncl.edu.tw/handle/03884082800595415626 |
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ndltd-TW-084NSYS40580012015-10-13T14:34:58Z http://ndltd.ncl.edu.tw/handle/03884082800595415626 Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap 覆蓋物對熱效應所引發砷化鋁鎵量子井結構無序現象之研究 WANG, CHUNG LIN 王中林 碩士 國立中山大學 材料科學工程研究所 84 HSIEH, K. Y. 謝光宇 1996 學位論文 ; thesis 55 zh-TW |
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zh-TW |
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Others
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碩士 === 國立中山大學 === 材料科學工程研究所 === 84 ===
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author2 |
HSIEH, K. Y. |
author_facet |
HSIEH, K. Y. WANG, CHUNG LIN 王中林 |
author |
WANG, CHUNG LIN 王中林 |
spellingShingle |
WANG, CHUNG LIN 王中林 Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap |
author_sort |
WANG, CHUNG LIN |
title |
Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap |
title_short |
Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap |
title_full |
Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap |
title_fullStr |
Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap |
title_full_unstemmed |
Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap |
title_sort |
study for vacancy-induced layer disordering of algaas-gaas quantum well heterostructure that utilizes sio2 cap |
publishDate |
1996 |
url |
http://ndltd.ncl.edu.tw/handle/03884082800595415626 |
work_keys_str_mv |
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