Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap
碩士 === 國立中山大學 === 材料科學工程研究所 === 84 ===
Main Authors: | WANG, CHUNG LIN, 王中林 |
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Other Authors: | HSIEH, K. Y. |
Format: | Others |
Language: | zh-TW |
Published: |
1996
|
Online Access: | http://ndltd.ncl.edu.tw/handle/03884082800595415626 |
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