| Summary: | 碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Boron doped polycrystalline diamond films of high quality were
in-situ grown in a hot-filament chemical vapor deposition
chamber, using boric acid as the doping source. The current-
voltage characteristic of the Al/p-polycrystalline diamond
Schottky contact had peculiar hysteresis loop in either forward
or reverse bias region. The hysteresis loop became larger when
the bias voltage was scanned with a higher speed or at higher
temperature. In this thesis, we used current- voltage-
temperature and junction capacitance technology to understand
the behavior of Al/p-polycrystalline diamond Schottky contact.
Deep levels of high density were proposed to be the fundamental
physical reason in explaining the formation of hysteresis
loop. This thesis contains six chapters. The outline is as
follows: chapter 1 is "introduction" , chapter 2 is "
Experiment procedures", chapter 3 is "Current- voltage-
temperature characteristic of Al/p-polycrystalline diamond
Schottky diode, chapter 4 is "Junction capacitance behavior of
Al/p-polycrystalline diamond Schottky contact", chapter 5 is
"Hysteresis loop characteristic of Al/p- polystalline Schottky
diode" and chapter 6 is "Conclusion".
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