Electrical reliability of Al/p-polycrystalline diamond Schottky contact

• Main Authors: Guo,Wen Chuei, 郭文暉
• Other Authors: Hwang, Jenn-Chang
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/50676573067329521160

碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Boron doped polycrystalline diamond films of high quality were in-situ grown in a hot-filament chemical vapor deposition chamber, using boric acid as the doping source. The current- voltage characteristic of the Al/p-polycrystalline diamond Schottky contact had peculiar hysteresis loop in either forward or reverse bias region. The hysteresis loop became larger when the bias voltage was scanned with a higher speed or at higher temperature. In this thesis, we used current- voltage- temperature and junction capacitance technology to understand the behavior of Al/p-polycrystalline diamond Schottky contact. Deep levels of high density were proposed to be the fundamental physical reason in explaining the formation of hysteresis loop. This thesis contains six chapters. The outline is as follows: chapter 1 is "introduction" , chapter 2 is " Experiment procedures", chapter 3 is "Current- voltage- temperature characteristic of Al/p-polycrystalline diamond Schottky diode, chapter 4 is "Junction capacitance behavior of Al/p-polycrystalline diamond Schottky contact", chapter 5 is "Hysteresis loop characteristic of Al/p- polystalline Schottky diode" and chapter 6 is "Conclusion".