Low Temperature Growth of SiC by ECR-CVD
碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Polycrystalline SiC can be grown on Si and on SiO2 substrates at 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trend of growth rates with respect to the MW power is similar to that of using S...
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ndltd-TW-084NTHU01590292016-07-13T04:10:34Z http://ndltd.ncl.edu.tw/handle/63248383220811952678 Low Temperature Growth of SiC by ECR-CVD 電子迴旋共振化學氣相沉積法之碳化矽低溫成長 Fu; Chung Min 傅宗民 碩士 國立清華大學 材料科學(工程)研究所 84 Polycrystalline SiC can be grown on Si and on SiO2 substrates at 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trend of growth rates with respect to the MW power is similar to that of using SiH4/CH4/H2 gas mixtures. SiC growth by ECR-CVD seems to be insensitive to the subs- trate surface, but sensitve to the gas phase condition. The re- sults of SiC deposition on Si and SiO2 substrates are similar. The surface carbonization and gradient composition buffers show no effects on the SiC grain sizes. Surface carbonization prior to SiC deposition can reduce Si substrate damages and eliminate amorphous interlayer between the poly-SiC film and Si substrate. And the carbonization step also prevents the effect of phosphine segregation on the Si surface. The trial of the p/n diode, which is fabricated by the growth of in-situ doped-SiC by ECR-CVD, still yield a poor I-V characte- ristics. The problems of ohmic contact formation, dopant activa- tion and crystallinity improvement of the doped- SiC films should be solved further. Chang Yee Shyi ; Yew Tri Rung 張一熙 ; 游萃蓉 1996 學位論文 ; thesis 46 en_US |
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碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Polycrystalline SiC can be grown on Si and on SiO2 substrates
at 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trend
of growth rates with respect to the MW power is similar to that
of using SiH4/CH4/H2 gas mixtures. SiC growth by ECR-CVD seems
to be insensitive to the subs- trate surface, but sensitve to
the gas phase condition. The re- sults of SiC deposition on Si
and SiO2 substrates are similar. The surface carbonization and
gradient composition buffers show no effects on the SiC grain
sizes. Surface carbonization prior to SiC deposition can reduce
Si substrate damages and eliminate amorphous interlayer between
the poly-SiC film and Si substrate. And the carbonization step
also prevents the effect of phosphine segregation on the Si
surface. The trial of the p/n diode, which is fabricated by the
growth of in-situ doped-SiC by ECR-CVD, still yield a poor I-V
characte- ristics. The problems of ohmic contact formation,
dopant activa- tion and crystallinity improvement of the doped-
SiC films should be solved further.
|
author2 |
Chang Yee Shyi ; Yew Tri Rung |
author_facet |
Chang Yee Shyi ; Yew Tri Rung Fu; Chung Min 傅宗民 |
author |
Fu; Chung Min 傅宗民 |
spellingShingle |
Fu; Chung Min 傅宗民 Low Temperature Growth of SiC by ECR-CVD |
author_sort |
Fu; Chung Min |
title |
Low Temperature Growth of SiC by ECR-CVD |
title_short |
Low Temperature Growth of SiC by ECR-CVD |
title_full |
Low Temperature Growth of SiC by ECR-CVD |
title_fullStr |
Low Temperature Growth of SiC by ECR-CVD |
title_full_unstemmed |
Low Temperature Growth of SiC by ECR-CVD |
title_sort |
low temperature growth of sic by ecr-cvd |
publishDate |
1996 |
url |
http://ndltd.ncl.edu.tw/handle/63248383220811952678 |
work_keys_str_mv |
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