Low Temperature Growth of SiC by ECR-CVD

• Main Authors: Fu; Chung Min, 傅宗民
• Other Authors: Chang Yee Shyi ; Yew Tri Rung
• Format: Others
• Language: en_US
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/63248383220811952678

碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Polycrystalline SiC can be grown on Si and on SiO2 substrates at 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trend of growth rates with respect to the MW power is similar to that of using SiH4/CH4/H2 gas mixtures. SiC growth by ECR-CVD seems to be insensitive to the subs- trate surface, but sensitve to the gas phase condition. The re- sults of SiC deposition on Si and SiO2 substrates are similar. The surface carbonization and gradient composition buffers show no effects on the SiC grain sizes. Surface carbonization prior to SiC deposition can reduce Si substrate damages and eliminate amorphous interlayer between the poly-SiC film and Si substrate. And the carbonization step also prevents the effect of phosphine segregation on the Si surface. The trial of the p/n diode, which is fabricated by the growth of in-situ doped-SiC by ECR-CVD, still yield a poor I-V characte- ristics. The problems of ohmic contact formation, dopant activa- tion and crystallinity improvement of the doped- SiC films should be solved further.