Low Temperature Growth of SiC by ECR-CVD
碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Polycrystalline SiC can be grown on Si and on SiO2 substrates at 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trend of growth rates with respect to the MW power is similar to that of using S...
Main Authors: | Fu; Chung Min, 傅宗民 |
---|---|
Other Authors: | Chang Yee Shyi ; Yew Tri Rung |
Format: | Others |
Language: | en_US |
Published: |
1996
|
Online Access: | http://ndltd.ncl.edu.tw/handle/63248383220811952678 |
Similar Items
-
Low Temperature Growth of Undoped and Doped Poly-Si by ECR- CVD
by: Cheng,Li Wei, et al.
Published: (1996) -
Low-Temperature Poly-Si Growth on Oxide Wafers by ECR-CVD
by: Wang Shyan Yhu, et al.
Published: (1995) -
The influence of growth temperature on CVD grown graphene on SiC
by: Nicollet, Andréa
Published: (2015) -
CVD Growth of SiC on Novel Si Substrates
by: Myers, Rachael L
Published: (2003) -
Growth silicon nanowires by ECR-CVD
by: 杜偉新
Published: (2004)