Low Temperature Growth of SiC by ECR-CVD
碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === Polycrystalline SiC can be grown on Si and on SiO2 substrates at 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trend of growth rates with respect to the MW power is similar to that of using S...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63248383220811952678 |