Study of the Modulated Spectra in GaAs/InGaAs Heterostructure
碩士 === 國立臺灣師範大學 === 物理學系 === 84 === The varities of built-in fields of the MBE grown GaAs/InGaAs heterostructures have been studied by the photoreflectance spectroscopy(PR) at various temperature.The spectra were complicated and contained four types of...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10758682445348306253 |
| Summary: | 碩士 === 國立臺灣師範大學 === 物理學系 === 84 === The varities of built-in fields of the MBE grown GaAs/InGaAs
heterostructures have been studied by the photoreflectance
spectroscopy(PR) at various temperature.The spectra were
complicated and contained four types of oscillations in
different spectra regions.The origins of different features in
the spectra were identified by comparing lineshape fitting and
analysis with experiment result of appling bias voltage on
sample. Above the energy gap of GaAs,there were two types of
spectra oscillations. The one with large oscillatin period was
due to the modulation of the high built-in field in second
layer.The lineshape oscillations above the energy gap of InGaAs
originated from first and third layers which were both n-type
doped. The built-in fields were deduced from the spectra
fitting and analysis,and compared with the numerically
calculated results.
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