Study of the Modulated Spectra in GaAs/InGaAs Heterostructure
碩士 === 國立臺灣師範大學 === 物理學系 === 84 === The varities of built-in fields of the MBE grown GaAs/InGaAs heterostructures have been studied by the photoreflectance spectroscopy(PR) at various temperature.The spectra were complicated and contained four types of...
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ndltd-TW-084NTNU01980072016-07-13T04:10:40Z http://ndltd.ncl.edu.tw/handle/10758682445348306253 Study of the Modulated Spectra in GaAs/InGaAs Heterostructure 砷化鎵/砷化鎵銦異質結構調制光譜 Sue, Shing-Jane 蘇素珍 碩士 國立臺灣師範大學 物理學系 84 The varities of built-in fields of the MBE grown GaAs/InGaAs heterostructures have been studied by the photoreflectance spectroscopy(PR) at various temperature.The spectra were complicated and contained four types of oscillations in different spectra regions.The origins of different features in the spectra were identified by comparing lineshape fitting and analysis with experiment result of appling bias voltage on sample. Above the energy gap of GaAs,there were two types of spectra oscillations. The one with large oscillatin period was due to the modulation of the high built-in field in second layer.The lineshape oscillations above the energy gap of InGaAs originated from first and third layers which were both n-type doped. The built-in fields were deduced from the spectra fitting and analysis,and compared with the numerically calculated results. Lu Chien-Rong 陸健榮 1996 學位論文 ; thesis 1 zh-TW |
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碩士 === 國立臺灣師範大學 === 物理學系 === 84 === The varities of built-in fields of the MBE grown GaAs/InGaAs
heterostructures have been studied by the photoreflectance
spectroscopy(PR) at various temperature.The spectra were
complicated and contained four types of oscillations in
different spectra regions.The origins of different features in
the spectra were identified by comparing lineshape fitting and
analysis with experiment result of appling bias voltage on
sample. Above the energy gap of GaAs,there were two types of
spectra oscillations. The one with large oscillatin period was
due to the modulation of the high built-in field in second
layer.The lineshape oscillations above the energy gap of InGaAs
originated from first and third layers which were both n-type
doped. The built-in fields were deduced from the spectra
fitting and analysis,and compared with the numerically
calculated results.
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author2 |
Lu Chien-Rong |
author_facet |
Lu Chien-Rong Sue, Shing-Jane 蘇素珍 |
author |
Sue, Shing-Jane 蘇素珍 |
spellingShingle |
Sue, Shing-Jane 蘇素珍 Study of the Modulated Spectra in GaAs/InGaAs Heterostructure |
author_sort |
Sue, Shing-Jane |
title |
Study of the Modulated Spectra in GaAs/InGaAs Heterostructure |
title_short |
Study of the Modulated Spectra in GaAs/InGaAs Heterostructure |
title_full |
Study of the Modulated Spectra in GaAs/InGaAs Heterostructure |
title_fullStr |
Study of the Modulated Spectra in GaAs/InGaAs Heterostructure |
title_full_unstemmed |
Study of the Modulated Spectra in GaAs/InGaAs Heterostructure |
title_sort |
study of the modulated spectra in gaas/ingaas heterostructure |
publishDate |
1996 |
url |
http://ndltd.ncl.edu.tw/handle/10758682445348306253 |
work_keys_str_mv |
AT sueshingjane studyofthemodulatedspectraingaasingaasheterostructure AT sūsùzhēn studyofthemodulatedspectraingaasingaasheterostructure AT sueshingjane shēnhuàjiāshēnhuàjiāyīnyìzhìjiégòudiàozhìguāngpǔ AT sūsùzhēn shēnhuàjiāshēnhuàjiāyīnyìzhìjiégòudiàozhìguāngpǔ |
_version_ |
1718345290297114624 |