Photoreflectance Studies of InGaAsP on (001)InP Strained-layer
碩士 === 國立臺灣大學 === 光電(科學)研究所 === 84 === A series of InGaAsP strained-layer multiple quantum well samples were grown on (001) InP substrates by gas source MBE to investigate the inter-subband transitions in compressively strained wells with t...
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ndltd-TW-084NTU001230132016-07-13T04:10:45Z http://ndltd.ncl.edu.tw/handle/34300117169665370937 Photoreflectance Studies of InGaAsP on (001)InP Strained-layer 砷磷化銦鎵/磷化銦應力層多重量子井系統之光調制反射光譜研究 Yang,Biing-Feng 楊秉峰 碩士 國立臺灣大學 光電(科學)研究所 84 A series of InGaAsP strained-layer multiple quantum well samples were grown on (001) InP substrates by gas source MBE to investigate the inter-subband transitions in compressively strained wells with the use of temperature-dependent PhotoReflectance(PR) spectroscopic technique. The well width of square wells varies from 50, 80, 100 to 120 angstrom under keeping strain constant. Applying the simple quantum-well model, we have calculated the inter-subband transition energies by taking into account both strain and quantum-size effects. Then, the inter-subband transition energy features of the PR spectra fitted by First Derivative Fitting Function of Gaussian Form to obtain corresponding transition energies and broadening parameters would be identified. In addition to parity-allowed transitions, parity-forbidden transitions are also observed. Being lacking of definite knowledge of many quaternary parameters, all InGaAsP material parameters used in theoretical calculation were obtained by linear interpolation. Therefore, the known values of material parameters of related binaries were necessary. Good agreement with experimental values of InGaAsP barrier bandgap, we can demonstrate that the composition control in process was very precise. Furthermore, the temperature variation of transition energies is also well satisfied for the Varshni equation. Jan,Gwo-Jen 詹國禎 1996 學位論文 ; thesis 64 zh-TW |
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zh-TW |
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碩士 === 國立臺灣大學 === 光電(科學)研究所 === 84 === A series of InGaAsP strained-layer multiple quantum well
samples were grown on (001) InP substrates by gas source MBE to
investigate the inter-subband transitions in compressively
strained wells with the use of temperature-dependent
PhotoReflectance(PR) spectroscopic technique. The well width of
square wells varies from 50, 80, 100 to 120 angstrom under
keeping strain constant. Applying the simple quantum-well
model, we have calculated the inter-subband transition energies
by taking into account both strain and quantum-size effects.
Then, the inter-subband transition energy features of the PR
spectra fitted by First Derivative Fitting Function of Gaussian
Form to obtain corresponding transition energies and broadening
parameters would be identified. In addition to parity-allowed
transitions, parity-forbidden transitions are also observed.
Being lacking of definite knowledge of many quaternary
parameters, all InGaAsP material parameters used in theoretical
calculation were obtained by linear interpolation. Therefore,
the known values of material parameters of related binaries
were necessary. Good agreement with experimental values of
InGaAsP barrier bandgap, we can demonstrate that the
composition control in process was very precise. Furthermore,
the temperature variation of transition energies is also well
satisfied for the Varshni equation.
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author2 |
Jan,Gwo-Jen |
author_facet |
Jan,Gwo-Jen Yang,Biing-Feng 楊秉峰 |
author |
Yang,Biing-Feng 楊秉峰 |
spellingShingle |
Yang,Biing-Feng 楊秉峰 Photoreflectance Studies of InGaAsP on (001)InP Strained-layer |
author_sort |
Yang,Biing-Feng |
title |
Photoreflectance Studies of InGaAsP on (001)InP Strained-layer |
title_short |
Photoreflectance Studies of InGaAsP on (001)InP Strained-layer |
title_full |
Photoreflectance Studies of InGaAsP on (001)InP Strained-layer |
title_fullStr |
Photoreflectance Studies of InGaAsP on (001)InP Strained-layer |
title_full_unstemmed |
Photoreflectance Studies of InGaAsP on (001)InP Strained-layer |
title_sort |
photoreflectance studies of ingaasp on (001)inp strained-layer |
publishDate |
1996 |
url |
http://ndltd.ncl.edu.tw/handle/34300117169665370937 |
work_keys_str_mv |
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