Study of Delta-doped Emitter Bipolar Transistor, Heterostruccture Emitter Bipolar Transistor and Pseudo-HBT
碩士 === 國立成功大學 === 電機工程學系 === 85 === To reduce the device offset voltage, three types of homojunction bipolar transistor, delta-doped emitter bipolar transistor, heterostructure emitter bipolar transistor and pseudo-HBT are investigated theoretically and experimentally. The main idea behind the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93382918633693406370 |