β-SiC/Si Heterostructure Negative-Differential-Resistance Devices
碩士 === 國立成功大學 === 電機工程學系 === 85 === In this thesis, we reported the first observation of negative-differential-resistance (NDR) characteristics in β-SiC/c-Si hetero-structures. Models based on the multi-tunneling capture-emission (MTCE) process were proposed to explain the NDR phenomena in these...
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| Format: | Others |
| Language: | zh-TW |
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1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07551542495243122332 |