Fabrication of the High Power Laser Diodes and Measurement on the Packages of the High speed Laser Diodes
碩士 === 國立交通大學 === 電子物理學系 === 85 === In this thesis, we report the fabrication of broad area high power single quantum well AlGaAs / GaAs graded index seperate confinement ( GRINSCH SQW ) lasers by proton implication and molecular beam epita...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32641582075705530921 |
| Summary: | 碩士 === 國立交通大學 === 電子物理學系 === 85 === In this thesis, we report the fabrication of broad area high
power single quantum well AlGaAs / GaAs graded index seperate
confinement ( GRINSCH SQW ) lasers by proton implication and
molecular beam epitaxy techniques. Threshold current of 450 mA
is obtained for a 1mm long and 100m m wide cavity. At 1.5 A
injection, laser output reaches 750 mW at room temperature
pulsed condition. We also die bond the SEL array on the C-block.
At the 500 mA injection, the lasers output reach 50 mW at room
temperature CW condition. We also measure the frequency
bandwidth of several different packages of the SEL. The SEL with
ceramics package have the best bandwidth ( over 1 GHz ) .
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